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FDS7064A
May 2000 ADVANCE INFORMATION
FDS7064A
30V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS( ON) in a small package.
Features
* 19 A, 30 V RDS(ON) = 6.5 m @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching * BottomlessTM SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
* Synchronous rectifier * DC/DC converter
S D Bottomless SO-8
S D
S D
DS
D
5 6 7
Bottom -sid e Drain Con tact
4 3 2 1
Pin 1 SO-8
SG SS SS S
TA =25 oC unless otherwise noted
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
30 12
(Note 1a)
Units
V V A W C
19 60 3.9 -55 to +175
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJ A RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
38 1
C/W C/W
Package Marking and Ordering Information
Device Marking FDS7064A Device FDS7064A Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2000 Fairchild Semiconductor Corporation
FDS7064A Rev A1(W)
FDS7064A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
T A = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = -12 V , VDS = 0 V
Min
30
Typ
Max
Units
V
Off Characteristics
20 1 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on) ID(on) gFS
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 19 A VGS = 10 V, ID = 21 A VGS = 4.5 V, VDS = 5 V VDS = 10 V, ID = 19 A
0.8
1.2 -4
2
V mV/C
6.5 5.5 50 75
m A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
5070 550 230
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6
17 18 69 29
25 25 100 42 46
ns ns ns ns nC nC nC
VDS = 15 V, ID = 19 A, VGS = 4.5 V
33 7.5 6.8
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 3.2 A Voltage 3.2
(Note 2)
A V
1.2
Notes: 1. RJA is the junction-to-ambient thermal resistance. RJA depends on the user's board design. a) 38C/W when mounted on a 1in 2 pad of 2 oz copper
FDS7064A Rev A1(W)
FDS7064A
Dimensional Outline and Pad Layout
Bottom View
Top View Minimum Recommended Landing Pattern
Notes: Unless otherwise Specified a) All dimensions in mm b) Standard lead finish: 20 - 80 inches nickel / 6 inches palladium c) Chip Size Dimensional Table Chip Size X1 Y1 2.36 2.36
X2 0.75
Y2 0.67
FDS7064A Rev A1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. E

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